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Session 1 Introduction to Semiconductor1

1.1 What is Semiconductor1

1.2 Classification of Semiconductor3

Reading Materials3

Session 2 Crystal Structure9

2.1 Primitive Cell and Crystal Plane9

2.2 Atomic Bonding11

Reading Materials12

Session 3 Band Model17

3.1 Introduction to Quantum Mechanics17

3.2 Band18

3.3 Effective Mass Theory19

Reading Materials20

Session 4 The Semiconductor in Equilibrium23

4.1 Charge Carriers in Semiconductor23

4.2 Intrinsic Semiconductor25

4.3 Extrinsic Semiconductor26

Reading Materials28

Session 5 Carrier Transport32

5.1 Overview of Carrier Transport32

5.2 Low Field Transport33

5.3 High Field Transport35

5.4 Diffusion Current35

Session 6 Nonequilibrium Excess Carriers in Semiconductor41

6.1 Recombination41

6.2 Minority Carrier Lifetime43

6.3 Ambipolar Transport44

Reading Materials45

Session 7 The pn Junction(Ⅰ)48

7.1 Introduction48

7.2 Basic Structure of the pn Junction48

7.3 Energy Bands for a pn Junction49

7.4 Ideal Current-Voltage Relationship49

7.5 Characteristics of a Practical Diode50

Reading Materials51

Session 8 The pn Junction(Ⅱ)56

8.1 Breakdown in pn Junction56

8.2 Small-Signal Diffusion Resistance of the pn Junction56

8.3 Junction Capacitance57

8.4 Diffusion or Storage Capacitance58

8.5 Diode Transients59

8.6 Circuit Models for Junction Diodes59

Reading Materials60

Session 9 Metal-Semiconductor Contacts64

9.1 Schottky Contacts64

9.2 Ohmic Contacts69

Reading Materials70

Session 10 Heterojunctions74

10.1 Strain and Stress at Heterointerfaces74

10.2 Heterojunction Materials75

10.3 Energy-Band Diagrams77

Reading Materials78

Session 11 The Bipolar Junction Transistor(Ⅰ)81

11.1 The Bipolar Junction Transistor Construction81

11.2 Transistor Action81

11.3 Nonideal Effects82

11.4 Base Resistance84

Reading Materials85

Session 12 The Bipolar Junction Transistor(Ⅱ)89

12.1 Breakdown Voltage89

12.2 Frequency Limits of BJT90

12.3 The Schottky-Clamped Transistor91

12.4 Small-signal Transistor Model92

Reading Materials93

Session 13 Basics of MOSFETs96

13.1 Introduction96

13.2 General Characteristics of a MOSFET96

13.3 MOS System97

13.4 Work Function Differences98

13.5 Flat-Band Voltage99

13.6 Threshold Voltage99

Reading Materials100

Session 14 Nonideal Effects of MOSFETs103

14.1 Introduction103

14.2 Effective Mobility103

14.3 Velocity Saturation103

14.4 Channel-length Modulation104

14.5 DIBL104

14.6 Hot-carrier Effect105

14.7 GIDL106

Reading Materials106

Session 15 Advanced MOSFET Devices111

15.1 Introduction111

15.2 Channel Doping Profile111

15.3 Gate Stack111

15.4 Source/Drain Design112

15.5 Schottky-Barrier Source/Drain113

15.6 Raised Source/Drain113

15.7 SOI114

15.8 Three Dimensional Structure115

Reading Materials115

Session 16 Introduction to Integrated Circuits120

16.1 Introduction120

16.2 Size and Complexity of Integrated Circuits121

16.3 Semiconductor Device for Integrated Circuits122

16.4 IC Design Process124

Reading Materials126

Session 17 Analog Integrated Circuits Design131

17.1 Introduction131

17.2 Analog Signal Processing133

17.3 CMOS Technology134

17.4 Amplifiers134

17.5 Differential Amplifiers135

17.6 Operational Amplifiers136

17.7 Characterization of Op Amps137

Reading Materials138

Session 18 Digital Integrated Circuits Design143

18.1 Introduction143

18.2 The Static CMOS Inverter143

18.3 Designing Combinational Logic Gates in CMOS146

Reading Materials151

Session 19 Radio Frequency Integrated Circuits Design156

19.1 Introduction156

19.2 RF System Performance Metrics157

19.3 RF Transceiver Architectures158

19.4 RF Passive Component159

19.5 Receiver159

19.6 Frequency Synthesizer160

19.7 Transmitter161

Reading Materials163

Session 20 Simulation and Verification171

20.1 Introduction171

20.2 SPICE Circuit Simulator171

20.3 Circuit Design Automation with Verilog174

20.4 Verification176

Reading Materials177

Session 21 Introduction to the Semiconductor Technology(Ⅰ)182

21.1 The Development of Semiconductor Technology182

21.2 Wafer Fabrication183

Reading Materials187

Session 22 Introduction to the Semiconductor Technology(Ⅱ)191

22.1 Assembly191

22.2 Metrology193

Reading Materials196

Session 23 Bipolar Technology and GaAs Digital Logic Process199

23.1 Bipolar Technology199

23.2 GaAs Digital Logic Process204

Reading Materials207

Session 24 CMOS Technology212

24.1 CMOS Fabrication Sequence212

24.2 Twin Well and Retrograde Well214

24.3 Isolation215

24.4 Structures that Reduce the Drain Field216

24.5 Gate Engineering216

Reading Materials217

Session 25 Reliability222

25.1 Introduction222

25.2 Failure Modes223

Reading Materials228

参考译文233

第1讲 半导体概述233

1.1 什么是半导体233

1.2 半导体的分类234

第2讲 晶体结构235

2.1 原胞和晶面235

2.2 原子价键236

第3讲 能带模型237

3.1 量子力学简介237

3.2 能带238

3.3 有效质量理论239

第4讲 平衡半导体239

4.1 半导体中的带电载流子240

4.2 本征半导体241

4.3 非本征半导体242

第5讲 载流子输运243

5.1 载流子输运概要243

5.2 低场输运244

5.3 强场输运246

5.4 扩散电流246

第6讲 半导体中的非平衡过剩载流子248

6.1 复合248

6.2 少数载流子寿命249

6.3 双极输运250

第7讲 pn结（Ⅰ）251

7.1 概述251

7.2 pn结的基本结构251

7.3 pn结的能带图251

7.4 理想电流-电压关系252

7.5 实际二极管特性252

第8讲 pn结（Ⅱ）253

8.1 pn结击穿253

8.2 pn结的小信号扩散电阻254

8.3 结电容254

8.4 扩散电容（存储电容）255

8.5 二极管瞬态特性255

8.6 pn结二极管的电路模型256

第9讲 金属—半导体接触256

9.1 肖特基接触256

9.2 欧姆接触259

第10讲 异质结260

10.1 异质界面的应变与应力261

10.2 异质结材料261

10.3 能带图263

第11讲 双极晶体管（Ⅰ）265

11.1 双极晶体管结构265

11.2 晶体管作用265

11.3 非理想效应266

11.4 基区电阻267

第12讲 双极晶体管（Ⅱ）268

12.1 击穿电压268

12.2 双极晶体管的频率特性269

12.3 肖特基钳位晶体管269

12.4 晶体管的小信号模型270

第13讲 MOSFET基础271

13.1 引言271

13.2 MOSFET的一般特征271

13.3 MOS系统272

13.4 功函数差273

13.5 平带电压273

13.6 阈值电压273

第14讲 MOSFET的非理想效应274

14.1 引言274

14.2 有效迁移率274

14.3 速度饱和274

14.4 沟道调制效应274

14.5 漏致势垒降低275

14.6 热电子效应275

14.7 栅感应漏极泄漏276

第15讲 先进的MOSFET器件276

15.1 引言276

15.2 沟道掺杂分布276

15.3 栅叠层277

15.4 源／漏设计277

15.5 肖特基源／漏277

15.6 提升的源／漏278

15.7 SOI（绝缘层上的硅）278

15.8 三维结构279

第16讲 集成电路简介279

16.1 概述279

16.2 集成电路的面积和复杂度280

16.3 集成电路中的半导体器件281

16.4 集成电路设计过程282

第17讲 模拟集成电路设计283

17.1 概述283

17.2 模拟信号处理285

17.3 CMOS工艺286

17.4 放大器286

17.5 差分放大器286

17.6 运算放大器287

17.7 运放的特点288

第18讲 数字集成电路289

18.1 介绍289

18.2 静态CMOS反相器289

18.3 CMOS组合逻辑门的设计291

第19讲 射频集成电路设计294

19.1 概述294

19.2 射频系统的性能指标295

19.3 射频收发机的结构296

19.4 无源射频元件296

19.5 低噪声放大器297

19.6 频率合成器297

19.7 发射机298

第20讲 仿真与验证299

20.1 简介299

20.2 SPICE电路仿真器299

20.3 使用Verilog进行电路的自动设计302

20.4 验证303

第21讲 半导体技术简介（Ⅰ）304

21.1 半导体技术的发展304

21.2 晶片制造304

第22讲 半导体技术简介（Ⅱ）308

22.1 组装308

22.2 测量309

第23讲 双极技术和砷化镓数字逻辑工艺312

23.1 双极技术312

23.2 砷化镓数字逻辑工艺315

第24讲 CMOS工艺317

24.1 CMOS制造流程317

24.2 双阱和倒掺杂阱318

24.3 隔离319

24.4 降低漏端电场的结构319

24.5 栅工程320

第25讲 可靠性321

25.1 概述321

25.2 失效模型322

参考文献326